The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
Apr. 22, 2005
Applicants:
Hee-sook Park, Seoul, KR;
Gil-heyun Choi, Yongin, KR;
Sang-bum Kang, Seoul, KR;
Seong-geon Park, Yongin, KR;
Kwang-jin Moon, Yongin, KR;
Inventors:
Hee-sook Park, Seoul, KR;
Gil-heyun Choi, Yongin, KR;
Sang-bum Kang, Seoul, KR;
Seong-geon Park, Yongin, KR;
Kwang-jin Moon, Yongin, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A metal contact in a semiconductor device is formed by forming an insulating layer having a contact hole therein on a silicon substrate. A cobalt layer is formed on a bottom and inner walls of the contact hole. A cobalt silicide layer is formed at the bottom of the contact hole while forming a titanium layer on the cobalt layer. A plug is formed on the titanium layer so as to fill the contact hole.