The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
Oct. 12, 2004
Yoshihiko Kobayashi, Tateshina, JP;
Susumu Sato, Komoro, JP;
Koki Tanimoto, Komoro, JP;
Tomio Yamada, Komoro, JP;
Hirokazu Nakajima, Saku, JP;
Tomoaki Kudaishi, Komoro, JP;
Yoshinori Shiokawa, Komoro, JP;
Toshiharu Niitsu, Komoro, JP;
Tsutomu Ida, Komoro, JP;
Yoshihiko Kobayashi, Tateshina, JP;
Susumu Sato, Komoro, JP;
Koki Tanimoto, Komoro, JP;
Tomio Yamada, Komoro, JP;
Hirokazu Nakajima, Saku, JP;
Tomoaki Kudaishi, Komoro, JP;
Yoshinori Shiokawa, Komoro, JP;
Toshiharu Niitsu, Komoro, JP;
Tsutomu Ida, Komoro, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In a dividing method according to the present invention, a wiring board formed of ceramic is forced up (upper swing) by a lower clamp claw of a clamper, and some of a protruded wiring board portion protruding from a conveying chute is pressed against a support body to perform a first division under bending stress. Thereafter, the upward-located clamper is rotatably swung (lower swing) downward to allow an upper clamp claw to press down the protruded wiring board portion, thereby performing a reverse division at the first division section again as a second division. Since the second division allows a tensile force to act on a remaining and thin non-divided resin portion, the non-divided resin portion is torn off. Thus, the perfect division is enabled. Fractionalizing is done by a one-row division and an individual division so that each semiconductor device is formed.