The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
Aug. 05, 2003
Katherina Babich, Chappaqua, NY (US);
Arpan P. Mahorowala, Bronxville, NY (US);
David R. Medeiros, Ossining, NY (US);
Dirk Pfeiffer, Dobbs Ferry, NY (US);
Katherina Babich, Chappaqua, NY (US);
Arpan P. Mahorowala, Bronxville, NY (US);
David R. Medeiros, Ossining, NY (US);
Dirk Pfeiffer, Dobbs Ferry, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO}, wherein n equals 8; and at least one chromophore moiety and transparent moiety. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO}, wherein n equals 8; and at least one chromophore moiety and transparent moiety.