The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
Dec. 17, 2004
Doo-hoon Goo, Gyeonggi-do, KR;
Jung-hyeon Lee, Gyeonggi-do, KR;
Gi-sung Yeo, Seoul, KR;
Han-ku Cho, Gyeonggi-do, KR;
Sang-gyun Woo, Gyeonggi-do, KR;
Doo-hoon Goo, Gyeonggi-do, KR;
Jung-hyeon Lee, Gyeonggi-do, KR;
Gi-sung Yeo, Seoul, KR;
Han-ku Cho, Gyeonggi-do, KR;
Sang-gyun Woo, Gyeonggi-do, KR;
Abstract
DRAM devices include a plurality of word lines extending in a first direction and a plurality of bit lines extending in a second direction and intersecting the word lines. A plurality of active regions is provided that are electrically coupled to the word lines and the bit lines. Each of the active regions defines a single unit memory cell having an area of 6Fin terms of a minimum line width F. Each of the active regions may be overlapped by only one word line and the active regions may be defined by an isolation region.