The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
Jun. 13, 2003
Sung-koo Lee, Seoul, KR;
Jae-chang Jung, Seoul, KR;
Young-sun Hwang, Icheon-shi, KR;
Cheol-kyu Bok, Seoul, KR;
Ki-soo Shin, Seongnam-shi, KR;
Sung-koo Lee, Seoul, KR;
Jae-chang Jung, Seoul, KR;
Young-sun Hwang, Icheon-shi, KR;
Cheol-kyu Bok, Seoul, KR;
Ki-soo Shin, Seongnam-shi, KR;
Hynix Semiconductor Inc., Guynggi-do, KR;
Abstract
A method for forming a pattern of a semiconductor device is disclosed which can increase the contact area between a photoresist and an anti-reflective film by performing an etching process on the anti-reflective film in a process of forming a photoresist pattern for a semiconductor device so as to form fine irregularities, thereby preventing collapse of a photoresist pattern. The disclosed method includes: (a) forming an organic anti-reflective film by coating an organic anti-reflective coating composition onto an upper portion of a layer to be etched, and performing a baking process thereto; (b) forming fine irregularities on the organic anti-reflective film by performing an etching process on the formed organic anti-reflective film; and (c) forming a photoresist pattern by coating a photoresist on the upper portion of the organic anti-reflective film, exposing the photoresist and then developing the same.