The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2007

Filed:

Jan. 23, 2006
Applicants:

Wilbur G. Catabay, Saratoga, CA (US);

Wei-jen Hsia, Saratoga, CA (US);

Hao Cui, Gresham, OR (US);

Inventors:

Wilbur G. Catabay, Saratoga, CA (US);

Wei-Jen Hsia, Saratoga, CA (US);

Hao Cui, Gresham, OR (US);

Assignee:

LSI Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a planarized layer on a substrate, where the substrate is cleaned, and the layer is formed having a surface with high portions and low portions. A resistive mask is formed over the low portions of the layer, but not over the high portions of the layer. The surface of the layer is etched, where the high portions of the layer are exposed to the etch, but the low portions of the layer underlying the resistive mask are not exposed to the etch. The etch of the surface of the layer is continued until the high portions of the layer are at substantially the same level as the low portions of the layer, thereby providing an initial planarization of the surface of the layer. The resistive mask is removed from the surface of the layer, and all of the surface of the layer is planarized to provide a planarized layer.


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