The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2007

Filed:

Nov. 18, 2005
Applicants:

Yung Feng Lin, Taoyuan, TW;

Yu Shen Lin, Taipei, TW;

Inventors:

Yung Feng Lin, Taoyuan, TW;

Yu Shen Lin, Taipei, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Various embodiments address the problem of efficiently reading data from nonvolatile memory. Nonvolatile memory circuit, method, and manufacturing method embodiments relate to a virtual ground array of nonvolatile memory cells which are read by precharging the drains of multiple nonvolatile memory cells and measuring the resulting currents. Power consumption and read margins are improved by reading multiple cells. Unnecessary bit line precharging can be avoided.


Find Patent Forward Citations

Lin, Yung. (2007). Method and apparatus for reading data from nonvolatile memory (U.S. Patent No. 7218563). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7218563

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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