The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2007

Filed:

Aug. 02, 2004
Applicants:

Michael J. Mcbride, Austin, TX (US);

Jesse C. Ramos, Austin, TX (US);

Mark E. Culp, Austin, TX (US);

Matthew Ryskoski, Kyle, TX (US);

Pirainder S. Lall, Austin, TX (US);

Inventors:

Michael J. McBride, Austin, TX (US);

Jesse C. Ramos, Austin, TX (US);

Mark E. Culp, Austin, TX (US);

Matthew Ryskoski, Kyle, TX (US);

Pirainder S. Lall, Austin, TX (US);

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is generally directed to various advanced process control methodologies for thermal oxidation processes, and various systems for accomplishing same. In one illustrative embodiment, the method comprises measuring an ambient pressure of an environment external to an oxidation chamber, determining a correction factor based upon at least the measured ambient pressure, determining at least one parameter of a thermal oxidation process to be performed in the oxidation chamber based upon the determined correction factor, and performing the thermal oxidation process comprised of the determined parameter on at least one substrate positioned in the oxidation chamber.


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