The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Apr. 01, 2004
Naohiro Sugiyama, Nagoya, JP;
Yasuo Kitou, Okazaki, JP;
Emi Makino, Nagoya, JP;
Kazukuni Hara, Kasugai, JP;
Kouki Futatsuyama, Kariya, JP;
Atsuto Okamoto, Nagoya, JP;
Naohiro Sugiyama, Nagoya, JP;
Yasuo Kitou, Okazaki, JP;
Emi Makino, Nagoya, JP;
Kazukuni Hara, Kasugai, JP;
Kouki Futatsuyama, Kariya, JP;
Atsuto Okamoto, Nagoya, JP;
Denso Corporation, Kariya, JP;
Abstract
A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; heating the gas at an upstream side from the substrate in a gas flow path; keeping a temperature of the substrate at a predetermined temperature lower than the gas so that the single crystal is grown from the substrate; heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate; and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber.