The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Oct. 27, 2004
Hyun-su Kim, Gyeonggi-do, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Jong-ho Yun, Gyeonggi-do, KR;
Sug-woo Jung, Gyeonggi-do, KR;
Eun-ji Jung, Gyeonggi-do, KR;
Sang-bom Kang, Seoul, KR;
Woong-hee Sohn, Gyeonggi-do, KR;
Hyun-su Kim, Gyeonggi-do, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Jong-ho Yun, Gyeonggi-do, KR;
Sug-woo Jung, Gyeonggi-do, KR;
Eun-ji Jung, Gyeonggi-do, KR;
Sang-bom Kang, Seoul, KR;
Woong-hee Sohn, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A method of forming a silicide film can include forming a first metal film on a silicon substrate and forming a second metal film on the first metal film at a temperature sufficient to react a first portion of the first metal film in contact with the silicon substrate to form a metal-silicide film. The second metal film and a second portion of the first metal film can be removed so that a thin metal-silicide film remains on the silicon substrate. Then, a metal wiring film can be formed on the thin metal-silicide film and the metal wiring film can be etched.