The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Feb. 01, 2001
Douglas Duane Coolbaugh, Essex Junction, VT (US);
Peter B. Gray, Essex, VT (US);
Donna Kaye Johnson, Underhill, VT (US);
Michael Joseph Zierak, Essex Junction, VT (US);
Douglas Duane Coolbaugh, Essex Junction, VT (US);
Peter B. Gray, Essex, VT (US);
Donna Kaye Johnson, Underhill, VT (US);
Michael Joseph Zierak, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A SiGe heterojunction bipolar transistor including at least an emitter formed on a SiGe base region wherein the sidewalls of the emitter are protected by a conformal passivation layer. The conformal passivation layer is formed on the exposed sidewalls of said emitter prior to siliciding the structure. The presence of the passivation layer in the structure prevents silicide shorts from occurring by eliminating bridging between adjacent silicide regions; therefore improved SiGe bipolar yield is obtained. A method for forming such a structure is also provided.