The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Feb. 06, 2004
John M. Brennan, Wyomissing, PA (US);
Joseph Michael Freund, Fogelsville, PA (US);
Sujal Dipak Shah, Fogelsville, PA (US);
Richard Handly Shanaman, Iii, Richland, PA (US);
John M. Brennan, Wyomissing, PA (US);
Joseph Michael Freund, Fogelsville, PA (US);
Sujal Dipak Shah, Fogelsville, PA (US);
Richard Handly Shanaman, III, Richland, PA (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A semiconductor device includes an IC die configured to reduce post-fabrication damage to the device. The IC die is formed such that at least a portion of one or more perimeter edges of the die are beveled by an etching process. The semiconductor device may include a plurality of IC dies, at least one of the IC dies being separated from the semiconductor device by forming one or more v-shaped grooves in an upper surface of the device, the v-shaped grooves defining perimeter edges of the at least one IC die. A back surface of the semiconductor device is removed until at least a portion of the v-shaped grooves are exposed. When the IC die is separated from the semiconductor device in this manner, a sidewall of each of the v-shaped grooves forms a beveled perimeter edge of the separated IC die.