The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Oct. 14, 2003
Jia-ren Chen, Tainan, TW;
Hung Che Hsiue, Tainan, TW;
Hann Huei Tsai, Tainan, TW;
Wei Hsiung Hsu, Tainan, TW;
Jia-Ren Chen, Tainan, TW;
Hung Che Hsiue, Tainan, TW;
Hann Huei Tsai, Tainan, TW;
Wei Hsiung Hsu, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method for fabricating a semiconductor product first provides an embedded semiconductor product comprising: (1) a logic region having formed therein a logic field effect transistor device; (2) a memory region having formed therein a memory field effect transistor device; and (3) a kerf region having formed therein a kerf field effect transistor device. The method also provides for measuring for the embedded semiconductor product a gate electrode linewidth for each of the logic field effect transistor device, the memory field effect transistor device and the kerf field effect transistor device. The measured gate electrode linewidths may be compared among themselves or to specified target values for purposes photoexposure process control.