The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2007

Filed:

Jun. 14, 2004
Applicants:

Yi-chi Shih, Palos Verdes Estates, CA (US);

Cindy Xing Qiu, Brossard, Quebec, CA;

Ishiang Shih, Brossard, Quebec, CA;

Chunong Qiu, Brossard, Quebec, CA;

Inventors:

Yi-Chi Shih, Palos Verdes Estates, CA (US);

Cindy Xing Qiu, Brossard, Quebec, CA;

Ishiang Shih, Brossard, Quebec, CA;

Chunong Qiu, Brossard, Quebec, CA;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/15 (2006.01); H01L 29/10 (2006.01); H01L 31/00 (2006.01); H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
Abstract

In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.


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