The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Dec. 23, 2004
Wen Yi Zhang, Singapore, SG;
Siew Khim OH, Singapore, SG;
Wen Yi Zhang, Singapore, SG;
Siew Khim Oh, Singapore, SG;
Systems on Silicon Manufacturing Co. Pte. Ltd., Singapore, SG;
Abstract
A method of preparing a planar view TEM sample of a planar portion of a circuit layer structure formed on a substrate. The method includes polishing the substrate circuit layer structure until a cross-sectional polishing face has substantially reached a first side face of the planar portion of the circuit layer structure; forming a trench structure in the cross-sectional polishing face. The trench structure extends into the cross-sectional polishing face substantially in the direction parallel to the substrate such that top and bottom faces of the planar portion of the circuit layer structure are exposed, wherein the planar portion of the circuit layer structure extends substantially parallel to the substrate from the first side face. The method further includes performing a cut around the first side face to free the planar portion of the circuit layer structure.