The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Sep. 17, 2004
Tab A. Stephens, Austin, TX (US);
Brian J. Goolsby, Austin, TX (US);
Bich-yen Nguyen, Austin, TX (US);
Voon-yew Thean, Austin, TX (US);
Tab A. Stephens, Austin, TX (US);
Brian J. Goolsby, Austin, TX (US);
Bich-Yen Nguyen, Austin, TX (US);
Voon-Yew Thean, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A metal layer is formed over a metal oxide, where the metal oxide is formed over a semiconductor substrate. A predetermined critical dimension of the metal layer is determined. A first etch is performed to etch the metal layer down to the metal oxide and form footings at the sidewalls of the metal layer. A second etch to remove the footings to target a predetermined critical dimension, wherein the second etch is selective to the metal oxide. In one embodiment, a conductive layer is formed over the metal layer. The bulk of the conductive layer may be etched leaving a portion in contact with the metal layer. Next, the portion left in contact with the metal layer may be etched using chemistry selective to the metal layer.