The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Mar. 07, 2005
Applicants:
Jiong-ping LU, Richardson, TX (US);
Duofeng Yue, Plano, TX (US);
Xiaozhan Liu, Garland, TX (US);
Donald S. Miles, Plano, TX (US);
Lance S. Robertson, Rockwall, TX (US);
Inventors:
Jiong-Ping Lu, Richardson, TX (US);
Duofeng Yue, Plano, TX (US);
Xiaozhan Liu, Garland, TX (US);
Donald S. Miles, Plano, TX (US);
Lance S. Robertson, Rockwall, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/336 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
Fluorine containing regions () are formed in the source and drain regions () of the MOS transistor. A metal layer () is formed over the fluorine containing regions () and the source and drain regions (). The metal layer is reacted with the underlying fluorine containing regions to form a metal silicide.