The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Aug. 17, 2004
Mariam G. Sadaka, Austin, TX (US);
Alexander L. Barr, Crolles, FR;
Bich-yen Nguyen, Austin, TX (US);
Voon-yew Thean, Austin, TX (US);
Ted R. White, Austin, TX (US);
Mariam G. Sadaka, Austin, TX (US);
Alexander L. Barr, Crolles, FR;
Bich-Yen Nguyen, Austin, TX (US);
Voon-Yew Thean, Austin, TX (US);
Ted R. White, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A process for forming a strained semiconductor layer. The process includes implanting ions into a semiconductor layer prior to performing a condensation process on the layer. The ions assist in diffusion of atoms (e.g. germanium) in the semiconductor layer and to increase the relaxation of the semiconductor layer. After the condensation process, the layer can be used as a template layer for forming a strained semiconductor layer.