The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Jan. 30, 2004
Method of manufacturing silicon single crystal and silicon single crystal manufactured by the method
Kazuhiro Harada, Tokyo, JP;
Yoji Suzuki, Tokyo, JP;
Hidenobu Abe, Tokyo, JP;
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Abstract
A silicon single crystal ingot is pulled at a pull rate so that the interior of the ingot results in a perfect region in which agglomerates of interstitial silicon-type point defects and agglomerates of vacancy-type point defects are absent, while rotating a quartz crucible for storing a silicon melt at a predetermined rotation speed and rotating the ingot pulled from the silicon melt in the opposite direction to the rotation of the quartz crucible at a predetermined rotation speed. An average rotation speed CRof the quartz crucible during the pulling of a top ingot portion is set to be faster than an average rotation speed CRof the quartz crucible during the pulling of a bottom ingot portion of the silicon single crystal ingot.