The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2007

Filed:

Dec. 23, 2003
Applicant:

Jonathan H. Liu, Folsom, CA (US);

Inventor:

Jonathan H. Liu, Folsom, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/03 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of the invention include on-chip characterization of transistor degradation. In one embodiment, includes one or more functional blocks to perform one or more functions and an integrated on-chip characterization circuit to perform on-chip characterization of transistor degradation. The integrated on-chip characterization circuit includes a selectively enabled ring oscillator to generate a reference oscillating signal, a free-running ring oscillator to generate a free-running oscillating signal, and a comparison circuit coupled to the selectively enabled ring oscillator and the free-running ring oscillator. From the reference oscillating signal and the free-running oscillating signal, the comparison circuit determine a measure of transistor degradation.


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