The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Mar. 31, 2004
Applicants:
Mukul P. Renavikar, Chandler, AZ (US);
Gudbjorg H. Oskarsdottir, Chandler, AZ (US);
Inventors:
Mukul P. Renavikar, Chandler, AZ (US);
Gudbjorg H. Oskarsdottir, Chandler, AZ (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
An embodiment of the invention reduces damage caused to a polymer ferroelectric layer in a polymer ferroelectric memory device by creating excess holes in the insulating metal nitride and/or metal oxide layers between the metal electrodes and polymer ferroelectric layer. The excess holes in the metal nitride and/or metal oxide trap electrons injected by the metal electrodes under AC bias that would otherwise damage the polymer ferroelectric layer.