The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Aug. 10, 2005
Applicants:
Janos Fucsko, Boise, ID (US);
Grady S. Waldo, Boise, ID (US);
Kevin J. Torek, Meridian, ID (US);
LI LI, Meridian, ID (US);
Inventors:
Janos Fucsko, Boise, ID (US);
Grady S. Waldo, Boise, ID (US);
Kevin J. Torek, Meridian, ID (US);
Li Li, Meridian, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 21/302 (2006.01); H01L 21/8283 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon nitride and an oxide of aluminum. The silicon nitride and the oxide is exposed to an etching solution comprising HF and an organic HF solvent under conditions effective to etch the silicon nitride substantially selectively relative to the oxide. Other aspects and implementations are contemplated.