The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Jul. 26, 2005
Applicants:
Min-san Huang, Hsinchu, TW;
Hann-jye Hsu, Taichung County, TW;
Liang-chuan Lai, Hsinchu County, TW;
Inventors:
Assignee:
Powerchip Semiconductor Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a trench gate dielectric layer is described. First, a substrate having a trench therein is provided. An in-situ steam generated oxidation process is performed to form a sacrificial layer on the surface of the trench. Then, the sacrificial layer is removed. Next, a low-pressure chemical vapor deposition is performed to form a gate dielectric layer on the surface of the trench.