The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Feb. 17, 2004
Alexander L. Barr, Crolles, FR;
Dejan Jovanovic, Austin, TX (US);
Bich-yen Nguyen, Austin, TX (US);
Mariam G. Sadaka, Austin, TX (US);
Voon-yew Thean, Austin, TX (US);
Ted R. White, Austin, TX (US);
Alexander L. Barr, Crolles, FR;
Dejan Jovanovic, Austin, TX (US);
Bich-Yen Nguyen, Austin, TX (US);
Mariam G. Sadaka, Austin, TX (US);
Voon-Yew Thean, Austin, TX (US);
Ted R. White, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A first semiconductor structure has a silicon substrate, a first silicon germanium layer grown on the silicon, a second silicon germanium layer on the first silicon germanium layer, and a strained silicon layer on the second silicon germanium layer. A second semiconductor structure has a silicon substrate and an insulating top layer. The silicon layer of the first semiconductor structure is bonded to the insulator layer to form a third semiconductor structure. The second silicon germanium layer is cut to separate most of the first semiconductor structure from the third semiconductor structure. The silicon germanium layer is removed to expose the strained silicon layer where transistors are subsequently formed, which is then the only layer remaining from the first semiconductor structure. The transistors are oriented along the <100> direction and at a 45 degree angle to the <100> direction of the base silicon layer of the second silicon.