The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2007

Filed:

May. 26, 2004
Applicants:

Morimi Osawa, Kawasaki, JP;

Kozo Ogino, Kawasaki, JP;

Inventors:

Morimi Osawa, Kawasaki, JP;

Kozo Ogino, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01); H01J 37/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for generating backscattering intensity with which charged particles are backscattered to a resist layer when charged particle beam is irradiated onto the resist layer which is formed on plural layers, each of which includes a pattern of one substance or a plurality of substances. For the nlayer from the resist layer among the plural layers, there is provided, for each of the substances in the nlayer, a reflection coefficient rn, which corresponds with the number of particles reflected by the nlayer; a transmission coefficient tn, which corresponds with the number of particles transmitted by the nlayer; and a scatter distribution in which the charged particles are scattered within the nlayer. The generation method comprises a first step of generating the backscattering intensity by using the reflection coefficient rn, the transmission coefficient tn, and the scatter distribution.


Find Patent Forward Citations

Quick Actions:

Osawa, Morimi. (2007). Method for generating backscattering intensity on the basis of lower layer structure in charged particle beam exposure, and method for fabricating semiconductor device utilizing this method (U.S. Patent No. 7205078). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7205078

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…