The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
May. 29, 2003
Yu-sheng Shu, Taoyuan, TW;
Yuan-hsun Wu, Taoyuan Hsien, TW;
Chung-yuan Lee, Taoyuan, TW;
Shian-jyh Lin, Chiayi Hsien, TW;
Yu-Sheng Shu, Taoyuan, TW;
Yuan-Hsun Wu, Taoyuan Hsien, TW;
Chung-Yuan Lee, Taoyuan, TW;
Shian-Jyh Lin, Chiayi Hsien, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method of forming a vertical memory device with a rectangular trench. First, a substrate covered by a photoresist layer is provided. Next, the photoresist layer is defined by a mask to form a rectangular opening, wherein the mask has two rectangular transparent patterns arranged with a predetermined interval. Next, the substrate is etched using the defined photoresist layer as a mask to form a single rectangular trench and the photoresist layer is then removed. Finally, a trench capacitor and a vertical transistor are successively formed in the rectangular trench to finish the vertical memory device.