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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7205033 B1

PDFFull Text
Date of Patent:
Apr. 17, 2007

Filed:

Sep. 03, 2004

Method for forming polycrystalline silicon film of polycrystalline silicon tft

Applicants:

Eok Su Kim, Seoul, KR;

Ho Nyeon Lee, Kyoungki-do, KR;

Myung Kwan Ryu, Kyoungki-do, KR;

Jae Chul Park, Seoul, KR;

Kyoung Seok Son, Seoul, KR;

Jun Ho Lee, Kyoungki-do, KR;

SE Yeoul Kwon, Seoul, KR;

Inventors:

Eok Su Kim, Seoul, KR;

Ho Nyeon Lee, Kyoungki-do, KR;

Myung Kwan Ryu, Kyoungki-do, KR;

Jae Chul Park, Seoul, KR;

Kyoung Seok Son, Seoul, KR;

Jun Ho Lee, Kyoungki-do, KR;

Se Yeoul Kwon, Seoul, KR;

Assignee:

Boe Hydis Technology Co., Ltd., Kyoungki-do, KR;

Attorney:

Ladas & Parry LLP

Primary Examiner:

Timothy Meeks

Assistant Examiner:

Cachet I Sellman

Int. Cl.
CPC ...
B05D 3/06 (2006.01); C23C 16/04 (2006.01); H01L 21/20 (2006.01); H01L 21/027 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.

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Kim, Eok. (2007). Method for forming polycrystalline silicon film of polycrystalline silicon tft (U.S. Patent No. 7205033). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7205033

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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