The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Aug. 11, 2004
Pang-shiu Chen, Hsinchu, TW;
Sheng-wei Lee, Hsinchu, TW;
Kao-feng Liao, Hsinchu, TW;
Lih-juann Chen, Hsinchu, TW;
Chee-wee Liu, Hsinchu, TW;
Pang-Shiu Chen, Hsinchu, TW;
Sheng-Wei Lee, Hsinchu, TW;
Kao-Feng Liao, Hsinchu, TW;
Lih-Juann Chen, Hsinchu, TW;
Chee-Wee Liu, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A construction of thin strain-relaxed SiGe layers and method for fabricating the same is provided. The construction includes a semiconductor substrate, a SiGe buffer layer formed on the semiconductor substrate, a Si(C) layer formed on the SiGe buffer layer, and an relaxed SiGe epitaxial layer formed on the Si(C) layer. The Si(C) layer is employed to change the strain-relaxed mechanism of the relaxed SiGe epitaxial layer formed on the Si(C) layer. Therefore, a thin relaxed SiGe epitaxial layer with low threading dislocation density, smooth surface is available. The fabricating time for fabricating the strain-relaxed SiGe layers is greatly reduced and the surface roughness is also improved.