The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7202170 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 10, 2007

Filed:

Jan. 20, 2004
Applicants:

Kuo-chin Liu, Hualien Hsien, TW;

Chung-long Leu, Taipei, TW;

Mei-hou KE, Hsinyin, TW;

Inventors:

Kuo-Chin Liu, Hualien Hsien, TW;

Chung-Long Leu, Taipei, TW;

Mei-Hou Ke, Hsinyin, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming floating gates for flash memory devices. A plurality of substrates is provided, in which a film to be etched and an overlying masking pattern layer are provided overlying each substrate. Each of the films in a plasma chamber is etched in sequence using the masking pattern layer as an etch mask, a polymer layer being deposited over the inner wall of the plasma chamber during the etching. An intermediary cleaning process is performed in the plasma chamber between the etchings before the deposited polymer layer reaches such a degree as to induce lateral etching on the next film to be etched, thereby improving etching profile of the films.


Find Patent Forward Citations

Liu, Kuo-Chin. (2007). Method of improving etching profile of floating gates for flash memory devices (U.S. Patent No. 7202170). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7202170

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…