The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Aug. 09, 2005
Rupert Krautbauer, Muehldorf, DE;
Christoph Frey, Freiberg, DE;
Simon Zitzelsberger, Burghausen, DE;
Lothar Lehmann, Freiberg, DE;
Rupert Krautbauer, Muehldorf, DE;
Christoph Frey, Freiberg, DE;
Simon Zitzelsberger, Burghausen, DE;
Lothar Lehmann, Freiberg, DE;
Siltronic AG, Munich, DE;
Abstract
A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.