The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2007

Filed:

Apr. 28, 2003
Applicants:

Kwang-sub Yoon, Seoul, KR;

Sang-gyun Woo, Yongin, KR;

Ki-yong Song, Seoul, KR;

Sang-jun Choi, Seoul, KR;

Inventors:

Kwang-Sub Yoon, Seoul, KR;

Sang-Gyun Woo, Yongin, KR;

Ki-Yong Song, Seoul, KR;

Sang-jun Choi, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 1/73 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); C08F 16/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a photosensitive polymer comprising pentafluoromethylvinyl ether derivative monomer having the formula: wherein R may be an alkoxy carbonyl, alkylsilane, a fluorine-substituted or unsubstituted C–Calkyl carbonyl, a fluorine-substituted or unsubstituted C–Ccycloalkylcarbonyl or a fluorine-substituted or unsubstituted benzoyl substituent group. The photosensitive polymer is the polymerization product of the pentafluoromethylvinyl ether derivative monomer and at least one additional monomer selected from the group consisting of (meth)acrylic acid, (meth)acrylate, styrene, norbornene, tetrafluoroethylene and maleic anhydride monomers. The photosensitive polymer may be used in photoresist compositions for exposure light sources having a predominant wavelength of less than 157 nm.


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