The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Apr. 26, 2000
Richard Spitz, Reutlingen, DE;
Helga Uebbing, Reutlingen, DE;
Doerte Eimers-klose, Reutlingen, DE;
Franz Laermer, Stuttgart, DE;
Andrea Schilp, Schwaebisch Gmuend, DE;
Richard Spitz, Reutlingen, DE;
Helga Uebbing, Reutlingen, DE;
Doerte Eimers-Klose, Reutlingen, DE;
Franz Laermer, Stuttgart, DE;
Andrea Schilp, Schwaebisch Gmuend, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A method for eliminating eruptions, impurities, and/or damage in a crystal lattice by selectively etching silicon elements of surface-plated and sawn-out parts of a silicon wafer. At least areas of the silicon elements are brought into contact with a gaseous etching medium that etches silicon selectively in a chemical reaction, and gaseous reaction products are produced during etching. An interhalogen or fluorine-noble gas compound that is in a gaseous state or was converted to the gaseous phase may be used as the etching medium. The method is believed to be suitable for producing power diodes sawn from a wafer or for overetching fully mounted individual diodes.