The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Jul. 15, 2002
Applicants:
Keith Edward Buchanan, Trellech, GB;
Joon-chai Yeoh, Blackwood, GB;
Inventors:
Keith Edward Buchanan, Trellech, GB;
Joon-Chai Yeoh, Blackwood, GB;
Assignee:
Aviza Europe Limited, Gwent, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract
This invention relates to a semiconductor structure for dual damascene processing and includes upper and lower low k dielectric layers formed in a stack when the upper surface of the lower layer has an integral etch stop layer formed by exposing the upper surfaces of the layer Hplasma without any prior anneal prior to the deposition of the upper layer.
Buchanan, Keith. (2007). Damascene structure with integral etch stop layer (U.S. Patent No. 7199474). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7199474
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile