The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
May. 26, 2004
Chi Wen Liu, Hsin-Chu, TW;
Jung Chih Tsao, Hsin-Chu, TW;
Shih Tzung Chang, Hsin-Chu, TW;
Ying Lang Wang, Hsin-Chu, TW;
Kei Wei Chen, Taipei, TW;
Chi Wen Liu, Hsin-Chu, TW;
Jung Chih Tsao, Hsin-Chu, TW;
Shih Tzung Chang, Hsin-Chu, TW;
Ying Lang Wang, Hsin-Chu, TW;
Kei Wei Chen, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a metal-filled opening in a semiconductor or other submicron device substrate includes forming a conductive bulk layer over the substrate surface and in the opening, wherein the conductive bulk layer has a first grain size. A conductive cap layer is formed over the conductive bulk layer, the conductive cap layer having a second grain size that is substantially smaller than the first grain size. At least one of the conductive bulk and cap layers are then planarized to form a planar surface that is substantially coincident with the substrate surface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile