The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2007
Filed:
Mar. 29, 2004
Geun-soo Lee, Yongin-shi, KR;
Cheol-kyu Bok, Seoul, KR;
Seung-chan Moon, Yongin-shi, KR;
Ki-soo Shin, Seongnam-shi, KR;
Won-wook Lee, Icheon-shi, KR;
Geun-soo Lee, Yongin-shi, KR;
Cheol-kyu Bok, Seoul, KR;
Seung-chan Moon, Yongin-shi, KR;
Ki-soo Shin, Seongnam-shi, KR;
Won-wook Lee, Icheon-shi, KR;
Hynix Semiconductor Inc., Kyungki-do, KR;
Abstract
Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I, its preparation method and an organic anti-reflective coating composition with respect to an ultra-fine pattern formation process of the photoresist for photolithography technique using ArF light source with a wavelength of 193 nm or VUV light source with a wavelength of 157 nm. An organic anti-reflective coating polymer capable of protecting a photoresist from amines in the atmosphere to minimize the post exposure delay effect after exposure to light and, at the same time, enhances notching status, such as, a pattern distortion caused by diffused reflection, and reducing reflection rate to minimize the swing effect. wherein m is an integer ranging from 5 to 5000.