The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2007

Filed:

Feb. 23, 2005
Applicants:

Sheng Chih Lai, Hsinchu, TW;

Ching Wei Tsai, Taoyuan, TW;

Hsueh Yi Lee, Hsinchu, TW;

Hsiang-lan Lung, Hsinchu, TW;

Inventors:

Sheng Chih Lai, Hsinchu, TW;

Ching Wei Tsai, Taoyuan, TW;

Hsueh Yi Lee, Hsinchu, TW;

Hsiang-Lan Lung, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are use methods, integrated circuits, and manufacturing methods for ferroelectric memory. A data value from multiple data values is received, for example by a state machine controlling the ferroelectric memory. The different data values correspond to different particular durations. The data value corresponding to the selected particular duration is stored in a ferroelectric memory cell by applying voltage to the ferroelectric memory cell for the particular duration.


Find Patent Forward Citations

Lai, Sheng. (2007). Method of multi-level cell feram (U.S. Patent No. 7196924). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7196924

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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