The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Aug. 25, 2005
Jui-yu Pan, Pingtung County, TW;
Cheng-yuan Hsu, Hsinchu, TW;
I-chun Chuang, Taipei, TW;
Chih-wei Hung, Hsin-chu, TW;
Jui-Yu Pan, Pingtung County, TW;
Cheng-Yuan Hsu, Hsinchu, TW;
I-Chun Chuang, Taipei, TW;
Chih-Wei Hung, Hsin-chu, TW;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A method for fabricating a flash memory is described. A mask layer having openings to expose a portion of the substrate is formed on the substrate. A tunneling dielectric layer is formed at the bottom surface of the openings. Conductive spacers are formed on the sidewalls of the openings. The conductive spacers are patterned to form a plurality of floating gates. A plurality of buried doped regions is formed in the substrate under the bottom surface of the openings. An inter-gate dielectric layer is formed over the substrate. A plurality of control gates is formed over the substrate to fill the openings. The mask layer is removed to form a plurality of memory units. A plurality of source regions and drain regions are formed in the substrate beside the memory units.