The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Aug. 26, 2004
Naoki Kai, Yokkaichi, JP;
Hiroaki Hazama, Hachioji, JP;
Hirohisa Iizuka, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes a memory cell array region including a plurality of NAND cells, each NAND cell having a plurality of memory cell transistors, and which are arranged in series, and a plurality of select transistors. A trench-type isolation region is formed between columns in the array of the NAND columns. The trench-type isolation region is formed in self-alignment with end portions of the channel region and a floating gate of the memory cell transistor, formed in self-alignment with the end portion of a channel region of the select transistor, and has a recess formed in at least the upper surface between the floating gates of the memory cell transistors.