The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2007

Filed:

Jul. 15, 2002
Applicants:

Ming Hung Chou, Miaoli, TW;

Tu Shun Chen, Yunlin, TW;

Smile Huang, Tainan, TW;

Inventors:

Ming Hung Chou, Miaoli, TW;

Tu Shun Chen, Yunlin, TW;

Smile Huang, Tainan, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A protection device and a method for manufacturing integrated circuit devices protect against plasma charge damage, and related charge damage during manufacture. The protection device comprises a dynamic threshold, NMOS/PMOS pair having their respective gate terminals coupled to the semiconductor bulk in which the channel regions are formed. With proper metal connection, the structure protects against plasma charge damage on the integrated circuit device during manufacture, and can also be operated to protect against abnormal voltages during operation of the circuit.


Find Patent Forward Citations

Chou, Ming. (2007). Plasma damage protection circuit for a semiconductor device (U.S. Patent No. 7196369). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7196369

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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