The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Nov. 18, 2003
Cyril Cabral, Jr., Ossining, NY (US);
Stefanie R. Chiras, Peekskill, NY (US);
Emanuel Cooper, Scarsdale, NY (US);
Hariklia Deligianni, Tenafly, NY (US);
Andrew J. Kellock, Sunnyvale, CA (US);
Judith M. Rubino, Ossining, NY (US);
Roger Y. Tsai, Yorkstown Heights, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
Stefanie R. Chiras, Peekskill, NY (US);
Emanuel Cooper, Scarsdale, NY (US);
Hariklia Deligianni, Tenafly, NY (US);
Andrew J. Kellock, Sunnyvale, CA (US);
Judith M. Rubino, Ossining, NY (US);
Roger Y. Tsai, Yorkstown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.