The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Feb. 08, 2005
John Michael Cotte, New Fairfield, CT (US);
Nils Deneke Hoivik, Pleasantville, NY (US);
Christopher Vincent Jahnes, Upper Saddle River, NJ (US);
John Michael Cotte, New Fairfield, CT (US);
Nils Deneke Hoivik, Pleasantville, NY (US);
Christopher Vincent Jahnes, Upper Saddle River, NJ (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of patterning and releasing chemically sensitive low k films without the complication of a permanent hardmask stack, yielding an unaltered free-standing structure is provided. The method includes providing a structure including a Si-containing substrate having in-laid etch stop layers located therein; forming a chemically sensitive low k film and a protective hardmask having a pattern atop the structure; transferring the pattern to the chemically sensitive low k film to provide an opening that exposes a portion of the Si-containing substrate; and etching the exposed portion of the Si-containing substrate through the opening to provide a cavity in the Si-containing substrate in which a free-standing low k film structure is formed, while removing the hardmask. In accordance with the present invention, the etching comprises a XeFetch gas.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile