The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Jul. 30, 2004
LU Zhijian, Plano, TX (US);
Qi-zhong Hong, Richardson, TX (US);
Lu Zhijian, Plano, TX (US);
Qi-Zhong Hong, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A dual damascene process employs a via fill material () with an etch rate that is within 60% of an etch rate that an underlying dielectric layer () etches for a given dielectric etch chemistry in which a trench () and via () are being formed. In one embodiment, an organic via fill material plug () is employed in conjunction with a bottom anti-reflective coating (BARC) material layer (). Both the organic via fill material plug () and the BARC material layer () are selected to have a material with an etch rate that within 60% of an etch rate that an underlying dielectric layer () etches for a given dielectric etch chemistry in which the trench () and via () are formed.