The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Dec. 30, 2004
Hsueh-shih Chen, Hsinchu, TW;
Dai-luon Lo, DahuTownship, Miaoli County, TW;
Chien-ming Chen, Yangmei Township, Taoyuan County, TW;
Gwo-yang Chang, Jiali Township, Tainan County, TW;
Hsueh-Shih Chen, Hsinchu, TW;
Dai-Luon Lo, DahuTownship, Miaoli County, TW;
Chien-Ming Chen, Yangmei Township, Taoyuan County, TW;
Gwo-Yang Chang, Jiali Township, Tainan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second precursor solution for forming a plurality of II–VI compound cores of the quantum dots dispersing in a melting mixed solution; and injecting a third precursor solution for a group VI element and a forth precursor solution with at least one dopant to the mixed solution in turn at a fixed time interval in order to form quantum dots with multi-shell dopant; wherein the dopant described here is selected from a group consisting of transitional metal and halogen elements. This method of the invention can dope the dopants in the inner quantum dot and enhance the emission intensity efficiently.