The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Jun. 07, 2004
Applicants:
Matthias Goldbach, Dresden, DE;
Thomas Mikolajick, Dresden, DE;
Albert Birner, Dresden, DE;
Inventors:
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Silicon nanocrystals are applied as storage layer () and removed using spacer elements () laterally with respect to the gate electrode (). By means of an implantation of dopant, source/drain regions () are fabricated in a self-aligned manner with respect to the storage layer (). The portions of the storage layer () are interrupted by the gate electrode () and the gate dielectric (), so that a central portion of the channel region () is not covered by the storage layer (). This memory cell is suitable as a multi-bit flash memory cell in a virtual ground architecture.