The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Jun. 24, 2003
Sean S. Kang, Fremont, CA (US);
Sangheon Lee, Milpitas, CA (US);
Wan-lin Chen, Sunnyvale, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Reza Sadjadi, Saratoga, CA (US);
Sean S. Kang, Fremont, CA (US);
Sangheon Lee, Milpitas, CA (US);
Wan-Lin Chen, Sunnyvale, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Reza Sadjadi, Saratoga, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for forming damascene features in a dielectric layer over a barrier layer over a substrate is provided. A plurality of vias are etched in the dielectric layer to the barrier layer with a plasma etching process in the plasma processing chamber. A patterned photoresist layer is formed with a trench pattern. Within a single plasma process chamber a combination via plug deposition to form plugs in the vias over the barrier layer and trench etch is provided.