The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Mar. 29, 2004
Hiroyuki Akatsu, Yorktown Heights, NY (US);
Rama Divakaruni, Ossining, NY (US);
Marwan Khater, Poughkeepsie, NY (US);
Christopher M. Schnabel, Poughkeepsie, NY (US);
William Tonti, Essex Junction, VT (US);
Hiroyuki Akatsu, Yorktown Heights, NY (US);
Rama Divakaruni, Ossining, NY (US);
Marwan Khater, Poughkeepsie, NY (US);
Christopher M. Schnabel, Poughkeepsie, NY (US);
William Tonti, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Structure and method are provided for forming a bipolar transistor. As disclosed, an intrinsic base layer is provided overlying a collector layer. A low-capacitance region is disposed laterally adjacent the collector layer. The low-capacitance region includes at least one of a dielectric region and a void disposed in an undercut underlying the intrinsic base layer. An emitter layer overlies the intrinsic base layer, and a raised extrinsic base layer overlies the intrinsic base layer.