The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Oct. 05, 2005
Sadaaki Masuoka, Kawasaki, JP;
Sadaaki Masuoka, Kawasaki, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
There is provided a semiconductor device in which the thresholds of gate electrodes in transistors can be adjusted together for each of regions having their own functions different from one another. The semiconductor device is provided with: a P-type Si substrate; a P-type annular wellprovided in the element formation surface side of the P-type Si substrate; and a N-type annular wellprovided inside the P-type annular well. Moreover, an SRAM-P-type welland an SRAM-N-type wellare provided inside the N-type annular well. A deep N-type wellis provided nearer to the bottom side of the P-type Si substratethan the SRAM-P-type welland the SRAM-N-type well. A plurality of P-type wellsare provided outside the P-type annular well, and a N-typeis provided in such a way that the wellencloses the outside faces of the P-type wells