The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Aug. 18, 2004
Sang-woo Lee, Seoul, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Jong-myeong Lee, Gyeonggi-do, KR;
Kyung-in Choi, Gyeonggi-do, KR;
Sang-Woo Lee, Seoul, KR;
Gil-Heyun Choi, Gyeonggi-do, KR;
Jong-Myeong Lee, Gyeonggi-do, KR;
Kyung-In Choi, Gyeonggi-do, KR;
Abstract
A method forming a tungsten contact can include forming a contact hole in an interlayer dielectric layer to expose a portion of an underlying silicon based substrate and to form a side wall of the contact hole. A tungsten silicide layer can be formed on at least on the exposed portion of the substrate. A tungsten nitride layer can be conformally formed on a surface of the interlayer dielectric layer, on the tungsten silicide layer and on the side wall. A contact tungsten layer can be formed on the tungsten nitride layer to fill the contact hole. Related apparatus and contacts are also disclosed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile