The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Feb. 10, 2005
Padmanabhan Krishnaraj, San Francisco, CA (US);
Michael S. Cox, Davenport, CA (US);
Bruno Geoffrion, South San Francisco, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Padmanabhan Krishnaraj, San Francisco, CA (US);
Michael S. Cox, Davenport, CA (US);
Bruno Geoffrion, South San Francisco, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.