The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Oct. 11, 2002
Satyadev R. Patel, Elk Grove, CA (US);
Gregory P. Schaadt, Santa Clara, CA (US);
Douglas B. Macdonald, Los Gatos, CA (US);
Niles K. Macdonald, San Jose, CA (US);
Hongqin Shi, San Jose, CA (US);
Satyadev R. Patel, Elk Grove, CA (US);
Gregory P. Schaadt, Santa Clara, CA (US);
Douglas B. MacDonald, Los Gatos, CA (US);
Niles K. MacDonald, San Jose, CA (US);
Hongqin Shi, San Jose, CA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber.